Bound-Constrained Sparse Representation for Electrical Impedance Tomography
边界约束稀疏表示用于电阻抗成像
机构 * School of Biomedical Engineering(生物医学工程学院) ; Suzhou Institute for Advanced Research(苏州先进研究院) ; University of Science and Technology of China(中国科学技术大学) ; Laboratory of Spin Magnetic Resonance(磁共振实验室) ; Anhui Province Key Laboratory of Scientific Instrument Development and Application(安徽省科学仪器开发与应用重点实验室) ; Jiangsu Provincial Key Laboratory of Multimodal Digital Twin Technology(江苏省多模态数字孪生技术重点实验室) ; Institute of Quantum Sensing of WuXi(武西安量子传感研究所)
AI总结 提出一种边界约束稀疏表示框架,通过隐式复合参数化从低维潜变量生成电导率,无需显式正则化即可改善电阻抗成像中的电导率估计。