Epitaxial Growth of Ultra-smooth $δ$-NbN Thin Films on TiN-Buffered Sapphire by Room-Temperature Sputtering
室温溅射在TiN缓冲蓝宝石上外延生长超光滑$\delta$-NbN薄膜
Swagata Bhunia, Aakash Shandilya, Sounak Samanta, Bikash C Barik, Soumyadip Chatterjee, Parushottam Majhi, Siddarth Rastogi, Kantimay Das Gupta, Suddhasatta Mahapatra, Apurba Laha
AI总结 本研究通过室温溅射在TiN缓冲c-蓝宝石衬底上外延生长单晶$\delta$-NbN薄膜,实现了皮米级表面粗糙度,并探讨了TiN缓冲层对超导临界温度的影响。
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$\delta$相氮化铌(NbN)是一种有前景的超导材料,化学性质稳定,且与常规III族氮化物半导体晶格兼容。由于高临界温度(T$_{c}$)和高临界磁场(H$_{c}$),NbN在从单光子探测器、热电子辐射热计到基于超导电路的量子计算架构等多种应用中备受青睐。然而,以经济有效的方式合成相纯和化学计量比的$\delta$-NbN高质量外延薄膜具有挑战性。在本研究中,我们研究了通过室温溅射在TiN缓冲c-蓝宝石(Al$_{2}$O$_{3}$)衬底上外延生长单晶$\delta$-NbN。对于这些薄膜,我们展示了皮米尺度的表面粗糙度,这是迄今为止报道的最低值。观察到外延$\delta$-NbN薄膜的临界温度(T$_{c}$)随着TiN缓冲层的插入而降低,初步归因于邻近效应导致的库珀对泄漏。TiN和NbN层表现为双层系统,其中由于不存在氧化物中间层,库珀对泄漏得以促进。因此,T$_{c}$随着TiN层厚度的增加而降低。
The $δ$ phase of Niobium Nitride (NbN) is a promising superconducting material, which is chemically stable and shares lattice compatibility with conventional III-Nitride semiconductors. Due to a high critical temperature (T$_{c}$) and a high critical (magnetic) field (H$_{c}$), NbN is much-coveted for a diverse set of applications spanning from single photon detectors, and hot-electron bolometers to quantum computing architectures using superconducting circuits. However, synthesizing high-quality epitaxial films of phase pure and stoichiometric $δ$-NbN in a cost-effective manner, is challenging. In this study, we investigate the epitaxial growth of single crystalline $δ$-NbN on TiN-buffered c-sapphire (Al$_{2}$O$_{3}$) substrates by sputtering at room temperature. For these films, we demonstrate a surface-roughness in picometer-scale, the lowest reported till date. The critical temperature (T$_{c}$) of the epitaxial $δ$-NbN films was observed to decrease with the insertion of the TiN buffer layer, tentatively attributable to the leakage of Cooper pairs, due to the proximity effect. TiN and NbN layer behave as a bilayer system, wherein Cooper-pair leakage is facilitated by the absence of any oxide interlayer. Consequently, T$_{c}$ reduces with increasing thickness of the TiN layer.