Plasma Etch Process Optimization for Photonic-Grade Diamond-on-Insulator Substrates and Thickness Evaluation using Colorimetry
用于光子级金刚石-绝缘体衬底的等离子体刻蚀工艺优化及基于色度学的厚度评估
Tianyin Chena, Alessio Mirandaa, Leyla Ramia, Ryoichi Ishihara, Salahuddin Nur
AI总结 开发了一种ICP-RIE等离子体刻蚀配方,用于制备大面积薄膜金刚石-绝缘体衬底,并提出了基于色度学的厚度评估方法,实现了5 nm分辨率的自动厚度推断。
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与光子电路集成的金刚石色心量子比特可以单独进行高保真度的初始化、操控、纠缠和读取,使其成为大规模模块化量子计算机、量子网络和分布式量子传感的有吸引力的候选者。然而,异质外延生长的单晶金刚石(SCD)和光子级金刚石-绝缘体(DOI)衬底的有限尺寸仍然是其与现有制造工艺集成的挑战。在这里,我们开发了一种等离子体刻蚀配方,用于将直接键合的(100)SCD膜(<50 μm)减薄为大面积薄膜DOI衬底,并展示了由所得DOI制造的自由站立光子芯片。ICP-RIE配方保留了金刚石键合,提供了足够的微掩模和表面质量控制,并实现了薄膜DOI的制造。我们将键合到SiO2/Si上的10 μm金刚石板减薄,获得了金刚石厚度≤300 nm的光子级DOI衬底。DOI膜在0.5×0.5 mm^2面积上厚度约为300 nm,表面粗糙度<0.5 nm,而键合界面保持完整。使用标准的两步光刻工艺在该DOI衬底上制造了金刚石光子芯片,无需复杂的薄膜转移、底切或基座形成。我们还对SiO2上金刚石的可视性进行了色度学研究,并量化了常见色度空间中不同厚度下的颜色差异。该分析能够从标准光学显微镜图像中以5 nm分辨率自动推断金刚石厚度,与白光干涉(WLI)测量结果吻合良好。DOI衬底和色度厚度评估方法为金刚石纳米光子器件的可扩展制造提供了有效的制造平台和可靠的验证途径,为大规模集成量子系统开辟了道路。
Diamond color-center qubits integrated with photonic circuits can be initialized, manipulated, entangled, and read individually with high fidelity, making them attractive for large-scale modular quantum computers, quantum networks, and distributed quantum sensing. However, the limited size of heteroepitaxially grown single-crystal diamond (SCD) and photonic-grade diamond-on-insulator (DOI) substrates remains a challenge for integration with existing manufacturing processes. Here, we develop a plasma etch recipe to thin direct-bonded (100) SCD membranes (<50 $μ$m) into large-area, thin-film DOI substrates, and demonstrate free-standing photonic chiplets fabricated from the resulting DOI. The ICP-RIE recipe preserves diamond bonding, provides sufficient micromasking and surface-quality control, and enables thin-film DOI manufacture. We thin a 10 $μ$m diamond plate bonded to SiO$_2$/Si and obtain a photonic-grade DOI substrate with diamond thickness $\leq$300 nm. The DOI film is around 300 nm thick over 0.5 $\times$ 0.5 mm$^2$, with surface roughness < 0.5 nm, while the bonding interface remains intact. Diamond photonic chiplets are fabricated on this DOI substrate using a standard two-step lithography process, without complex thin-film transfer, under-etching, or pedestal formation. We also present a colorimetric study of diamond visibility on SiO$_2$ and quantify color differences across thicknesses in common colorimetric spaces. This analysis enables automatic diamond-thickness extrapolation from standard optical microscope images with 5 nm resolution, in good agreement with white-light interferometry (WLI) measurements. The DOI substrate and colorimetric thickness-evaluation method provide an effective fabrication platform and reliable validation route for scalable manufacturing of diamond nanophotonic devices, opening a path toward large-scale integrated quantum systems.