Ferroelectric Altermagnetic Chern Insulator in magnetic field: electrical control of the Chern number
磁场中的铁电交变磁陈绝缘体:陈数的电控
Meysam Bagheri Tagani, Carmine Autieri
AI总结 通过磁场、自旋倾斜和铁电轨道杂化解除Γ点简并,实现陈数的电场控制,在d波交变磁模型中构建铁电可调陈绝缘体。
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- 7 pages, 4 figures
交变磁体中的量子反常霍尔效应难以实现,因为在非相对论极限下,自旋向上和自旋向下态在Γ点保持简并。我们从Bernevig-Hughes-Zhang模型出发引入非平庸能带拓扑。我们证明,外磁场、自旋倾斜和铁电轨道杂化的联合效应解除了Γ点的简并,实现了陈数的电场控制。一个具有能带反转的最小二维d波交变磁模型随后实现了具有自发自旋倾斜的铁电可调陈绝缘体。铁电极化控制拓扑相和轨道角动量,通过自旋倾斜响应和铁电性相关的贝里曲率重组,实现了包含C = ±1和C = ±2的丰富相图。我们的结果建立了交变磁材料中电可调陈绝缘相的一条对称性一致的路径,为低功耗拓扑和轨道电子器件开辟了机遇。
The quantum anomalous Hall effect in altermagnets is difficult to realize because spin-up and spin-down states remain degenerate at the $\Gamma$ point in the nonrelativistic limit. We start from the Bernevig-Hughes-Zhang model to incorporate nontrivial band topology. We demonstrate that the combined effects of an external magnetic field, spin canting, and ferroelectric orbital hybridization lift the degeneracy at the $\Gamma$ point, enabling electric-field control of the Chern number. A minimal two-dimensional d-wave altermagnetic model with band inversion then realizes a ferroelectrically tunable Chern insulator with spontaneous spin canting. The ferroelectric polarization controls the topological phase and the orbital angular momentum, enabling a rich phase diagram with C = $\pm 1$ and C = $\pm 2$ through a Berry-curvature reorganization linked to the spin canting response and ferroelectricity. Our results establish a symmetry-consistent route to electrically tunable Chern insulating phases in altermagnetic materials, opening opportunities for low-power topological and orbitronic devices.