Non-volatile SRAM (nvSRAM) designs have been investigated to address the high leakage power of CMOS-based SRAM and the large write latency of emerging non-volatile memory (eNVM) technologies. However, prior nvSRAM designs that combine SRAM with eNVM devices typically require backup and restore (B\&R) operations and incur significant cell-area overhead. Here, we propose a differential memory bit-cell consisting of a pair of cross-coupled ferroelectric field-effect transistors (FeFETs) and a pair of access transistors, resulting in a four-transistor (4T) structure, which is smaller than conventional 6T SRAM and many prior nvSRAM designs. The proposed bit-cell can be configured to operate in either volatile or non-volatile mode by adjusting the write conditions. In the non-volatile mode, the proposed nvSRAM achieves a store power of 0.13~$μ$W with a 2~ns store time, and no explicit B\&R operation is required. The proposed bit-cell can also be viewed as a cross-coupled gain cell, enabling further applications.

As silicon photonic integrated circuits (PICs) scale in complexity, testing and calibration increasingly depend on effective phase modulation mechanisms. This work compares thermally induced phase modulation and carrier-based electrical modulation in Mach-Zehnder and microring modulators. The devices are designed and evaluated for extinction ratio, tuning efficiency, power consumption, and modulation bandwidth. The study identifies key trade-offs among modulation speed, energy consumption, and tuning controllability that directly influence the suitability of these methods for test signal generation and calibration tasks. The results highlight the relative advantages and limitations of thermal and electrical approaches across different operating regimes. These findings provide practical design guidance for selecting phase modulation strategies in scalable silicon photonic systems with integrated test and calibration requirements.

We propose a deep photonic neuromorphic network (PNN) architecture based on phase-change material (PCM) synapses and local optical feedback for online, unsupervised Hebbian learning. The proposed architecture combines optical vector-matrix multiplication, non-volatile PCM synaptic weighting, and local coincidence-driven synaptic adaptation within a multilayer photonic crossbar framework compatible with photonic integrated circuits. Unlike conventional PNNs that rely on externally computed gradients, repeated optical-electrical-optical conversions, or global backpropagation, the proposed framework employs local Hebbian learning governed directly by correlated pre- and post-synaptic optical activity. To investigate the feasibility of the proposed learning mechanism, we implemented the PNN design using fiber-optic components, programmable variable optical attenuators, and real-time software control that incorporates PCM thermal dynamics. Supervised and unsupervised learning behaviors were experimentally evaluated under both offline and online learning conditions using representative image-recognition tasks. The experimental results demonstrate adaptive synaptic evolution, successful optical inference, and autonomous pattern encoding through local Hebbian learning under realistic fiber-optic hardware conditions. These results establish a pathway toward future integrated photonic neuromorphic systems capable of scalable and energy-efficient online Hebbian learning.