Fast track to the overdoped regime of superconducting YBa2Cu3O7-δ thin films via electrochemical oxidation
通过电化学氧化快速进入超导YBa2Cu3O7-δ薄膜的过掺杂区域
Alexander Stangl, Aiswarya Kethamkuzhi, Hervé Roussel, Cornelia Pop, Xavier Obradors, Teresa Puig, Mónica Burriel, Arnaud Badel
AI总结 本研究首次利用电化学方法实现YBa2Cu3O7-δ薄膜的过掺杂区域调控,通过原位XRD和电学测量精确控制氧浓度,验证了高掺杂状态和临界电流密度,为清洁电子超导体的发展提供了新路径。
详情
- Journal ref
- Adv Funct Mater 2026
高温超导体,特别是YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO),被认为是清洁能源未来的关键技术。YBCO中的空穴掺杂是其超导性能出现的前提。迄今为止,研究集中在欠掺杂和最优掺杂区域,由于实际限制难以达到过掺杂状态,尽管从基础和应用方面具有很高的吸引力,因为竞争秩序消失且临界电流密度预计达到峰值。在此,我们首次采用电化学方法进入主要未探索的过掺杂区域。我们展示了通过电化学氧化结合原位XRD和电学测量,在YBCO薄膜的整个非化学计量窗口(0≤δ≤1)内精确控制体氧浓度。通过多模式方法,包括X射线衍射、电学、霍尔和磁性表征,验证了结果中的高掺杂状态和临界电流密度。因此,这项工作为基于电化学氧化的清洁电子氧过掺杂铜酸盐超导体开辟了有前景的路径,从而有助于进一步将临界电流密度推至其固有极限。
High temperature superconductors, especially YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO), are considered a key enabling technology towards a clean energy future. Hole doping in YBCO is a prerequisite for the emergence of its unchallenged superconducting properties. Up to now, research was focused on the under- and optimally doped region, due to practical limitations in reaching the overdoped state, despite being highly interesting from fundamental and applied aspects as competing orders vanish and critical current densities are expected to peak. Here, we deploy for the first time an electrochemical method to access the mostly uncharted overdoped region. We demonstrate precise control over the bulk oxygen concentration in YBCO thin films across the full off-stoichiometry window (0$\leδ\le$1) using electrochemical oxidation combined with in situ XRD and electrical measurements. Resulting high doping states and critical current densities are confirmed using a multi modal approach, including x-ray diffraction, electrical, Hall and magnetic characterization. Thus, this work opens a promising pathway based on electrochemical oxidation towards electronically clean, oxygen overdoped cuprate superconductors and therefore will assist to further push the critical current density to its intrinsic limit.